Data for reference ohtani-apl-65-61

Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxy

A. Ohtani, K. S. Stevens, R. Beresford

Applied Physics Letters 65(1), 61 (1994).

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This item is cited by the following items in the database:

  1. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  2. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

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