Data for reference khan-apl-65-520

Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

M. Asif Khan, S. Krishnankutty, R. A. Skogman, J. N. Kuznia, D. T. Olson , T. George

Applied Physics Letters 65(5), 520 (1994).

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This item is cited by the following items in the database:

  1. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  2. Optically pumped GaN-AlGaN double-heterostructure lasers grown by ECR-GSMBE and HVPE.
  3. MOVPE of Thick InGaN on Sapphire Substrate
  4. Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films
  5. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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