Data for reference gotz-apl-65-463

Deep level defects in n-type GaN

W. Gotz, N. M. Johnson , H. Amano, I. Akasaki

Applied Physics Letters 65(4), 463 (1994).

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This item is cited by the following items in the database:

  1. Yellow Band and Deep levels in Undoped MOVPE GaN.
  2. Schottky Barriers on n-GaN Grown on SiC
  3. Degradation mechanisms in AlGaN/InGaN/GaN light sources

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 3, 1996 11:43:21 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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