Data for reference kuznia-apl-65-2407Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates
J. N. Kuznia, J. W. Yang, Q. C. Chen, S. Krishnankutty, M. Asif Khan , T. George , J. Frietas, Jr.
Applied Physics Letters 65(19), 2407 (1994).
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- Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD
Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru
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