Data for reference ponce-apl-65-2302

Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

F. A. Ponce , J. S. Major, W. E. Plano, D. F. Welch

Applied Physics Letters 65(18), 2302 (1994).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by Fernando A. Ponce from jumanji.parc.xerox.com. on Sunday, March 23, 1997 9:43:31 PM


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