Data for reference wickenden-apl-65-2024

High quality self-nucleated AlxGa1-x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor deposition

D. K. Wickenden, C. B. Bargeron, W. A. Bryden, J. Miragliotta, T. J. Kistenmacher

Applied Physics Letters 65(16), 2024 (1994).

AlxGa1-xN alloy films with x<0.4 were self-nucleated on (001) sapphire by LP-MOCVD. Lattice constant was found to vary linearly with composition. Derived optical bandgaps also showed a linear dependance on composition.

This item is cited by the following items in the database:

  1. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  2. Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers

Contributed by M. D. Bremser from gatormac3.mte.ncsu.edu. on Friday, July 19, 1996 3:48:16 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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