Data for reference fertitta-apl-65-1823

High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

K. G. Fertitta, A. L. Holmes, J. G. Neff, F. J. Ciuba, R. D. Dupuis

Applied Physics Letters 65(14), 1823 (1994).

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This item is cited by the following items in the database:

  1. Alternative N precursors and Mg doped GaN grown by MOVPE

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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