Data for reference wetzel-apl-65-1033

GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique

C. Wetzel, D. Volm, B. K. Meyer , K. Pressel, S. Nilsson , E. N. Mokhov, P. G. Baranov

Applied Physics Letters 65(8), 1033 (1994).

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This item is cited by the following items in the database:

  1. Current status of GaN crystal growth by sublimation sandwich technique

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