Data for reference pearton-apl-64-3643

Dry patterning of InGaN and InAlN

S. J. Pearton, C. R. Abernathy , F. Ren

Applied Physics Letters 64(26), 3643 (1994).

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This item cites the following items in the database:

  1. Reactive ion etching of gallium nitride in silicon tetrachloride plasmas
  2. p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation
  3. III-V Nitrides for Electronic and Optoelectronic Applications
  4. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
  5. A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy
  6. Perspective on gallium nitride
  7. Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy Dry and wet etching characteristics of InN, AlN, and GaN
  8. Dry Etching of Thin Film InN, AiN and GaN
  9. Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
  10. GaN, AlN, and InN: A review

This item is cited by the following items in the database:

  1. Fabrication of GaN mesa structures

Contributed by E. Hellman
Modified by Eric S. Hellman from nsr.mij.mrs.org. on Tuesday, February 13, 1996 7:33:39 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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