okumura-apl-64-2997

Data for reference okumura-apl-64-2997

Optical properties near the band gap on hexagonal and cubic GaN

H. Okumura, S. Yoshida, T. Okahisa

Applied Physics Letters 64(22), 2997 (1994).

We have measured the optical properties of cubic and hexagonal GaN films epitaxially grown on GaAs and 3C-SiC substrates by gas-source MBE using microwave-activated NH3 source. The crystalline quality of the epilayers was improved by using an activated NH3 beam and 3C-SiC substrates. They enabled us to obtain intense optical signals. The measured spectra suggest that the band gap of cubic GaN is around 190meV smaller than that of hexagonal GaN.

This item is cited by the following items in the database:

Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN

Contributed by Hajime Okumura from wall.etl.go.jp. on Friday, May 17, 1996 7:39:05 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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