Data for reference pearton-apl-64-2294

Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN

S. J. Pearton, C. R. Abernathy , F. Ren

Applied Physics Letters 64(17), 2294 (1994).

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This item is cited by the following items in the database:

  1. Fabrication of GaN mesa structures
  2. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
  3. New plasma chemistries for etching GaN and InN: BI3 and BBr3

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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