Data for reference nakamura-apl-64-1687

Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh

Applied Physics Letters 64(13), 1687 (1994).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Growth and characterization of AlInGaN quaternary alloys
  2. The Morphology and Cathodoluminescence of GaN Thin Films
  3. LUMINESCENCE SPECTRA OF SUPERBRIGHT BLUE AND GREEN InGaN/AlGaN/GaN LIGHT-EMITTING DIODES
  4. GaN m-i-n LED grown by MOVPE
  5. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  6. Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  7. Evidence for Shallow Acceptor Levels in MBE Grown GaN
  8. AlGaInN Quaternary Alloys by MOCVD
  9. Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  10. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  11. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  12. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
  13. MOVPE of Thick InGaN on Sapphire Substrate
  14. MOVPE growth optimization of high quality InGaN films.
  15. AlGaN-Based Bragg Reflectors
  16. GaN based LED's with different recombination zones
  17. Degradation mechanisms in AlGaN/InGaN/GaN light sources
  18. New plasma chemistries for etching GaN and InN: BI3 and BBr3
  19. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  20. Optical properties of electron-irradiated GaN
  21. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  22. High quality GaN films - growth and properties
  23. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  24. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  25. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  26. Room Temperature Ohmic contact on n-type GaN using plasma treatment

Contributed by Carol Trager-Cowan from cowan-physics.phys.strath.ac.uk. on Thursday, May 30, 1996 5:46:15 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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