Data for reference lin-apl-64-1003

Low resistance ohmic contacts on wide band-gap GaN

M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, H. Morkoc

Applied Physics Letters 64(8), 1003 (1994).

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This item is cited by the following items in the database:

  1. Fabrication of GaN mesa structures
  2. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  3. Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
  4. Schottky barrier properties of various metals on n-type GaN
  5. Thermal stability of W, WSix , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
  6. High temperature surface degradation of III–V nitrides
  7. Room Temperature Ohmic contact on n-type GaN using plasma treatment

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 3, 1996 6:41:34 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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