Data for reference adesida-apl-63-2777

Reactive ion etching of gallium nitride in silicon tetrachloride plasmas

I. Adesida, A. Mahajan, E. Andideh , M. Asif Khan, D. T. Olsen, J. N. Kuznia

Applied Physics Letters 63(20), 2777 (1993).

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This item is cited by the following items in the database:

  1. Dry patterning of InGaN and InAlN
  2. ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
  3. Fabrication of GaN mesa structures
  4. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
  5. New plasma chemistries for etching GaN and InN: BI3 and BBr3

Contributed by E. Hellman
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