Data for reference khan-apl-63-2455

Schottky barrier photodetector based on Mg-doped p-type GaN films

M. Asif Khan, J. N. Kuznia, D. T. Olson, M. Blasingame, A. R. Bhattarai

Applied Physics Letters 63(18), 2455 (1993).

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This item is cited by the following items in the database:

  1. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  2. Schottky barrier properties of various metals on n-type GaN
  3. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  4. Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers

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