Data for reference bykhovski-apl-63-2243

Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure forarbitrary growth orientation

Alexei Bykhovski, Boris Gelmont, Michael Shur

Applied Physics Letters 63(16), 2243 (1993).

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This item cites the following items in the database:

  1. Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure forarbitrary growth orientation

This item is cited by the following items in the database:

  1. Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure forarbitrary growth orientation
  2. Electrical and optical properties of rf-sputtered GaN and InN

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by Stanislav S.S Bahtov II from 81.17.132.2 on Wednesday, June 8, 2005 2:32:05 PM

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