Data for reference khan-apl-63-1214

High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction

M. Asif Khan, A. Bhattarai, J. N. Kuznia, D. T. Olson

Applied Physics Letters 63(9), 1214 (1993).

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This item is cited by the following items in the database:

  1. Schottky barrier properties of various metals on n-type GaN
  2. Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures >1100°ree;C
  3. Preparation of Sapphire for High Quality III-Nitride Growth
  4. Room Temperature Ohmic contact on n-type GaN using plasma treatment

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