Data for reference lin-apl-62-702

GaN grown on hydrogen plasma cleaned 6H-SiC substrates

M. E. Lin, S. Strite, A. Agarwal, A. Salvador, G. L. Zhou, N. Teraguchi, A. Rockett, H. Morkoc

Applied Physics Letters 62(7), 702 (1993).

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This item is cited by the following items in the database:

  1. Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
  2. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  3. Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE
  4. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  5. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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