Data for reference foresi-apl-62-2859

Metal contacts to gallium nitride

J. S. Foresi, T. D. Moustakas

Applied Physics Letters 62(22), 2859 (1993).

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This item is cited by the following items in the database:

  1. Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
  2. Schottky barrier properties of various metals on n-type GaN
  3. Thermal stability of W, WSix , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
  4. High temperature surface degradation of III–V nitrides
  5. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  6. Schottky Diodes on MOCVD Grown AlGaN Films.

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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