Data for reference nakamura-apl-62-2390

High-power InGaN/GaN double-heterostructure violet light emitting diodes

Shuji Nakamura, Masayuki Senoh, Takashi Mukai

Applied Physics Letters 62(19), 2390 (1993).

InGaN/GaN double-heterostructure light-emitting diodes were fabricated.

This item is cited by the following items in the database:

  1. High temperature surface degradation of III–V nitrides
  2. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
  3. Luminescent properties of gallium nitride layers grown by vapor-phase epitaxy in a chloride system on silicon carbide substrates
  4. Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride
  5. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  6. Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by Infrared Ellipsometry
  7. High-temperature structural behavior of Ni/Au Contact on GaN(0001)

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by Chong Cook Kim from cacheflow-2.postech.ac.kr. on Thursday, January 18, 2001 8:38:43 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 5:17:58 PM.
© 1998 The Materials Research Society