Data for reference khan-apl-62-1786

Metal semiconductor field effect transistor based on single crystal GaN

M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, D. T. Olson

Applied Physics Letters 62(15), 1786 (1993).

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This item is cited by the following items in the database:

  1. Research on GaN MODFET's
  2. Schottky Barriers on n-GaN Grown on SiC
  3. Schottky barrier properties of various metals on n-type GaN
  4. Thermal stability of W, WSix , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
  5. Room Temperature Ohmic contact on n-type GaN using plasma treatment
  6. Effect of Photo-Assisted RIE Damage on GaN

Contributed by A submitted manuscript, on Thursday, July 18, 1996 4:27:11 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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