Data for reference weyers-apl-62-1396

Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3

Markus Weyers, Michio Sato

Applied Physics Letters 62(12), 1396 (1993).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Growth of single phase GaAs1-xNx with high nitrogen concentration by MOMBE
  2. Plasma-excited OMVPE of GaN on (0001) sapphire
  3. Surface Morphology and Structure of GaNxAs1-x
  4. Optical Properties of GaNAs Grown by MBE
  5. Electronic Properties of Ga(In)NAs Alloys

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 4:24:59 PM.
© 1998 The Materials Research Society