Data for reference newman-apl-62-1242

Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films

N. Newman, J. Ross, M. Rubin

Applied Physics Letters 62(11), 1242 (1993).

Role of thermodynamic and kinetic factors in the growth of GaN is discussed. It is shown that growth techniques like MBE use a combination of the growth parameters (temperature, species' partial pressures) corresponding to dissocoation of GaN into liquid and gas phases. In contrast, VPE is predicted to use the parameters corresponding to stable growth of the crystal.

This item is cited by the following items in the database:

  1. Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  2. Growth of Ga-face and N-face GaN films using ZnO Substrates
  3. Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  4. Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  5. The role of gaseous species in group-III nitride growth
  6. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  7. The Polarity of GaN: a Critical Review
  8. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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