Data for reference detchprohm-apl-61-2688

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

T. Detchprohm, K. Hiramatsu , H. Amano, I. Akasaki

Applied Physics Letters 61(22), 2688 (1992).

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This item is cited by the following items in the database:

  1. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
  2. The selective growth in hydride vapor phase epitaxy of GaN
  3. Localized Epitaxy of GaN by HVPE on patterned Substrates

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