Data for reference khan-apl-60-2917

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

M. Asif Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame , L. F. Reitz

Applied Physics Letters 60(23), 2917 (1992).

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This item is cited by the following items in the database:

  1. Schottky barrier properties of various metals on n-type GaN
  2. GaN films prepared by ECR plasma-assisted deposition
  3. Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  4. Dispersion properties of aluminum nitride as measured by an optical waveguide technique
  5. Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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