Data for reference powell-apl-60-2505

Growth of GaN(0001)1 (times) 1 on Al2O3(0001) by gas-source molecular beam epitaxy

R. C. Powell, N.-E. Lee, J. E. Greene

Applied Physics Letters 60(20), 2505 (1992).

GaN is grown using NH3 on c-plane sapphire. Structural and electrical properties are investigated.

This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth
  2. Defect structure in selectively grown GaN films with low threading dislocation density

Contributed by Devin E. Crawford from mac16.ee.umn.edu. on Wednesday, June 19, 1996 5:47:37 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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