Data for reference pribat-apl-60-2144

High quality GaAs on Si by conformal growth

D. Pribat, B. Gerard, M. Dupuy, P. Legagneux

Applied Physics Letters 60(17), 2144 (1992).

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This item is cited by the following items in the database:

  1. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
  2. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

Contributed by A submitted manuscript, on February 23, 1998 3:30:14 PM

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