khan-apl-60-1366

Data for reference khan-apl-60-1366

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

M. Asif Khan, R. A. Skogman, J. M. Van Hove, D. T. Olson, J. N. Kuznia

Applied Physics Letters 60(11), 1366 (1992).

In this letter the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates is reported. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. As best as is known this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

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Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1992ApPhL..60.1366K
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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