khan-apl-59-1449

Data for reference khan-apl-59-1449

Reflective filters based on single-crystal GaN/Al_xGa_1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition

M. Asif Khan, J. N. Kuznia, J. M. Van Hove, D. T. Olson

Applied Physics Letters 59(12), 1449 (1991).

This letter reports the first-ever fabrication and characterization of reflective quarter wave filter stacks based on single-crystal GaN/Al(x)Ga(1-x)N multilayers. The filters were designed for peak reflectivities at 400 and 450 nm. The designed epitaxial layers were deposited using a low-pressure metalorganic chemical vapor deposition system. The interface abruptness and the thicknesses of individual stack layers were measured using a unique Zalar sputter Auger depth profiling procedure and X-ray analysis. The abruptness was found to be better than 40 A, which is the instrument measurement limit. For 18-period filters the measured peak reflectivities of 80 percent and 95 percent agreed reasonably well with the estimations of 88 percent and 95 percent of the multilayer designs.

This item is cited by the following items in the database:

GaN, AlN, and InN: A review

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1991ApPhL..59.1449K
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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Reflective filters based on single-crystal GaN/AlxGa1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition

Reflective filters based on single-crystal GaN/Al_xGa_1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition