Data for reference okumura-apl-59-1058

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

H. Okumura, S. Misawa, S. Yoshida

Applied Physics Letters 59(9), 1058 (1991).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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