khan-apl-58-526

Data for reference khan-apl-58-526

Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition

M. Asif Khan, J. N. Kuznia, J. M. Van Hove, D. T. Olson , S. Krishnankutty, R. M. Kolbas

Applied Physics Letters 58(5), 526 (1991).

The low-pressure metalorganic chemical vapor deposition of high quality single-crystal GaN layers over basal plane sapphire substrates is reported. Optimization of growth conditions resulted in material with carrier densities of 10 to the 17th/cu cm at room temperature and corresponding mobilities around 350 sq cm/V s. The photoluminescence linewidths improved from 160 meV to 25 meV (FWHM). Improved material quality made it possible to observe the polar optical mode and the ionized impurity scattering regimes in the mobility versus temperature data. Good quality Schottky barriers were formed on the as-grown material using a tungsten probe and an alloyed indium contact. The observations indicate a direct correlation between electrical and optical characteristics of good material and strongly question nitrogen vacancies as the sole explanation for the high carrier densities observed in poor quality GaN growths.

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Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1991ApPhL..58..526K
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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