High electron mobility GaN/Al_xGa_1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition

Applied Physics Letters 58(21), 2408 (1991).

This letter reports the first observation of enhanced electron mobility in GaN/Al(x)Ga(1-x)N heterojunctions. These structures were deposited on basal plane sapphire using low-pressure metalorganic chemical vapor deposition. The electron mobility of a single heterojunction composed of 500 A of Al(0.09)Ga(0.91)N deposited onto 0.3 micron of GaN was around 620 sq cm/V s at room temperature as compared to 56 sq cm/V s for bulk GaN of the same thickness deposited under identical conditions. The mobility for the single heterojunction increased to a value of 1600 sq cm/V s at 77 K, whereas the mobility of the 0.3-micron GaN layer alone peaked at 62 sq cm/V s at 180 K and decreased to 19 sq cm/V s at 77 K. An 18-layer multiple heterojunction structure displayed a peak mobility of 1980 sq cm/V s at 77 K.

This item is cited by the following items in the database:

1. GaN, AlN, and InN: A review
2. ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
3. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1991ApPhL..58.2408K
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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