Data for reference martin-apl-58-2375

Electrical properties of GaAs/GaN/GaAs semiconductor- insulator-semiconductor structures

G. Martin, S. Strite, J. Thornton, H. Morkoc

Applied Physics Letters 58(21), 2375 (1991).

The current-voltage (IV) characteristics of GaAs/GaN/GaAs semiconductor-insulator-semiconductor structures as a function of temperature are reported. IV measurements show a strong temperature dependence indicating a thermal distribution of carriers flowing over a barrier. From these data, an effective conduction band barrier of 0.9 eV between GaAs and GaN is deduced.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1991ApPhL..58.2375M
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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