Data for reference nakamura-apl-58-2021

Novel metalorganic chemical vapor deposition system for GaN growth

Shuji Nakamura, Yasuhiro Harada, Masayuki Seno

Applied Physics Letters 58(18), 2021 (1991).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Study of GaN films grown by metalorganic chemical vapour deposition
  3. New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
  4. The role of gaseous species in group-III nitride growth

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