Data for reference khan-apl-58-1515

Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low- pressure metalorganic chemical vapor deposition

M. Asif Khan, D. T. Olson, J. M. Van Hove, J. N. Kuznia

Applied Physics Letters 58(14), 1515 (1991).

The first observation of near-UV vertical-cavity stimulated emission from a photopumped GaN epilayer at room temperature is reported. The epilayer was deposited over AIN-coated basal plane sapphire substrate using low-pressure metalorganic chemical vapor deposition. Epitaxy quality of a 1.5-micron-thick GaN layer was high enough to achieve stimulated emission at room temperature. The observed near-UV optical emission power was a nonlinear function of the pump power density. At threshold power density, line narrowing and a shift of the peak UV emission toward longer wavelengths were also observed. Data comparing the UV emission for the vertical-cavity and the edge emission geometry are also presented.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  3. Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1991ApPhL..58.1515K
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 10:22:02 AM.
© 1998 The Materials Research Society