Data for reference gibson-apl-57-1203

Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures

E. M. Gibson, C. T. Foxon, J. Zhang, B. A. Joyce

Applied Physics Letters 57(12), 1203 (1990).

The authors report on results of direct measurements of Ga desorption rate by modulated beam mass spectrometry

This item is cited by the following items in the database:

  1. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia

Contributed by A submitted manuscript, on Tuesday, May 4, 1999 9:57:15 AM

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