Data for reference chidambarrao-apl-57-1001

Effects of Peierls barrier and epithreading dislocation orientation on the critical thickness in heteroepitaxial structures

D Chidambarrao, GR Srinivasan, B Cunningham, CS Murthy

Applied Physics Letters 57(10), 1001 (1990).

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This item is cited by the following items in the database:

  1. Pinholes, Dislocations and Strain Relaxation in InGaN

Contributed by B. Jahnen from hugo.fen.baynet.de. on Sunday, July 12, 1998 7:32:32 AM

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