Data for reference wakahara-apl-54-709

Heteroepitaxial growth of InN by microwave-excited metalorganic chemical vapor phase epitaxy

A. Wakahara, A. Yoshida

Applied Physics Letters 54, 709 (1989).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. InN thin film growth using N2, NH3 and N2-He rf plasma
  3. Growth of InN at High Temperature by HVPE

Contributed by S. Strite

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