Data for reference spah-apl-53-441

Parameters for in situ growth of high Tc superconducting thin films using an oxygen plasma source

R. J. Spah, H. F. Hess, H. L. Stormer, A. E. White, K. T. Short

Applied Physics Letters 53(5), 441 (1988).

Superconducting thin films of Dy-Ba-Cu-O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the oxygen incorporation. This allows growth on a relatively low-temperature substrate kept below 600 C followed by an in situ anneal below 400 C. Thin films of Dy-Ba-Cu-O which were fully superconducting at 40 K have been fabricated by this in situ growth process.

This item is cited by the following items in the database:

  1. ScAlMgO4: an Oxide Substrate for GaN Epitaxy
  2. Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1988ApPhL..53..441S

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