Data for reference tsao-apl-53-288

Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy

J. Y. Tsao, T. M. Brennan, B. E. Hammons

Applied Physics Letters 53, 288 (1988).

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This item is cited by the following items in the database:

  1. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by R. Held from pc22.ece.umn.edu. on February 24, 1998 9:24:54 PM

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