sheng-apl-52-576

Data for reference sheng-apl-52-576

Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride

T. Y. Sheng, Z. Q. Yu, G. J. Collins

Applied Physics Letters 52(7), 576 (1988).

A well-confined hydrogen plasma of disk shape is employed both as a vacuum ultraviolet (VUV) lamp operating primarily at 121.5 nm and as a source of atomic hydrogen radicals. Both VUV photons and atomic hydrogen act to dissociate feedstock gases used in low-temperature metalorganic chemical vapor deposition (MOCVD). Thin films have been deposited both with the confined hydrogen plasma and with an excimer laser operating at 193 nm in order to compare the two methods. Preliminary chemical and electrical properties of the films deposited via the two methods indicate the superiority of the atomic hydrogen assisted MOCVD technique.

This item is cited by the following items in the database:

GaN, AlN, and InN: A review

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1988ApPhL..52..576S
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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