Data for reference h-apl-48-353

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

H, Amano, N. Sawaki, I. Akasaki, Y. Toyoda

Applied Physics Letters 48, 353 (1986).

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This item is cited by the following items in the database:

  1. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Saturday, October 28, 2000 10:56:00 PM

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