Data for reference gaskill-apl-48-1449

Growth of GaN films using trimethylgallium and hydrazine

D. K. Gaskill, N. Bottka, M. C. Lin

Applied Physics Letters 48(21), 1449 (1986).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

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