Data for reference khan-apl-43-492

Properties and ion implantation of Al(x)Ga(1-x)N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition

M. A. Khan, R. A. Skogman, R. G. Schulze, M. Gershenzon

Applied Physics Letters 43, 492 (1983).

High quality single crystal films of Al(x)Ga(1-x)N have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be(+) and N(+) implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  3. Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  4. High Resistivity AlxGa1-xN Layers Grown by MOCVD
  5. MOVPE Growth and Structural Characterization of AlxGa1-xN

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