khan-apl-42-430

Data for reference khan-apl-42-430

Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition

M. A. Khan, R. A. Skogman, R. G. Schulze, M. Gershenzon

Applied Physics Letters 42, 430 (1983).

High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using the reaction of (C2H5)3Ga with NH3. Electrical and optical properties of the layers were measured. Schottky barriers were fabricated after compensating the background donor concentration (1 x 10 to the 19th/cu cm) with Be(+) or N(+) implants. These Schottky barriers were electrically and optically characterized.

This item is cited by the following items in the database:

GaN, AlN, and InN: A review

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1983ApPhL..42..430K

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