Data for reference yoshida-apl-42-427

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AIN-coated sapphire substrates

S. Yoshida, S. Misawa, S. Gonda

Applied Physics Letters 42, 427 (1983).

Not Available

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  3. Properties of GaN epilayers grown on misoriented sapphire substrates

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1983ApPhL..42..427Y

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