Data for reference hovel-apl-20-71

Electrical and optical properties of rf-sputtered GaN and InN

H. J. Hovel, J. J. Cuomo

Applied Physics Letters 20, 71 (1972).

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This item cites the following items in the database:

  1. Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure forarbitrary growth orientation

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite
Modified by Stanislav S.S Bahtov II from 81.17.132.2 on Wednesday, June 8, 2005 2:32:25 PM

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