The preparation and properties of vapor-deposited single-crystal-line GaN

Applied Physics Letters 15, 327 (1969).

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This item is cited by the following items in the database:

1. GaN, AlN, and InN: A review
2. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
3. Molecular beam epitaxy of GaN(0001) utilizing NH₃ and/or NH⁺_x ions: Growth kinetics and defect structure MBE of GaN(0001) utilizing NH₃ and/or NH⁺_x ions
4. Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
5. GaN films prepared by ECR plasma-assisted deposition
6. High temperature surface degradation of III–V nitrides
7. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
8. Electrical characteristics of GaN/6H-SiC n-p heterojunctions.
9. Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
10. Paramagnetic defects in GaN
11. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
12. Review of polarity determination and control of GaN

Contributed by S. Strite

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