Data for reference picraux-apl-14-7

Temperature dependence of lattice disorder created in Si by 40 keV Sb ions

S. T. Picraux, J. E. Westmoreland, J. W. Mayer, R. R. Hart, O. J. Marsh

Applied Physics Letters 14, 7 (1969).

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  1. Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN

Contributed by A submitted manuscript, on Thursday, October 10, 2002 6:42:12 PM

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