1995

• High Pressure Crystallization of Iii-v Nitrides
• Epitaxial Layers Versus Bulk Single Crystals of GaN: Temperature Studies of Lattice Parameters and Energy Gap
• Photoluminescence Study of GaN

1996

• Doping properties of amphoteric C, Si, and Ge impurities in GaN and AlN
• On GaN crystallization by ammonothermal method
• Shallow donors and acceptors in GaN; bound excitons and pair spectra

1997

• Two-electron transition in homoepitaxial GaN layers

last updated Thursday, February 14, 2002 1:42:33 PM.
© 2001 The Materials Research Society